K4F160411D-F APLIKÁCIE,OBVOD,FUNKCIE
K4F160411D-F Datasheet PDF
| Výrobca | Balenie | Opis | Teplota | |
|---|---|---|---|---|
| Samsung | TSOP-II | 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
K4F160411D-F PDF | Min°C | Max°C |
- Samsung semiconductor K4F160411C
4Bit CMOS Dynamic with Fast Page Mode - Samsung semiconductor K4F160411C-B
4Bit CMOS Dynamic with Fast Page Mode - Samsung semiconductor K4F160411C-F
4Bit CMOS Dynamic with Fast Page Mode - Samsung semiconductor K4F160411D
4Bit CMOS Dynamic with Fast Page Mode - Samsung K4F160411D-B
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. - Samsung K4F160411D-F
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. - Samsung semiconductor K4F160412C
4Bit CMOS Dynamic with Fast Page Mode - Samsung semiconductor K4F160412C-B
4Bit CMOS Dynamic with Fast Page Mode - Samsung semiconductor K4F160412C-F
4Bit CMOS Dynamic with Fast Page Mode - Samsung semiconductor K4F160412D
4Bit CMOS Dynamic with Fast Page Mode - Samsung K4F160412D-B
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4F160412D-F
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.