CM150E3Y12E APLIKÁCIE,OBVOD,FUNKCIE
CM150E3Y12E Datasheet PDF
| Výrobca | Balenie | Opis | Teplota | |
|---|---|---|---|---|
| TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 150A I(C) | Min°C | Max°C |
- Mitsubishi Electric Semiconductor CM150E3U-12H
HIGH POWER SWITCHING INSULATED TYPE - Mitsubishi CM150E3U-12H09
IGBT MODULES HIGH POWER SWITCHING INSULATED TYPE - MITSUBISHI[Mitsubishi Electric Semiconductor] CM150E3U-24F
HIGH POWER SWITCHING - Mitsubishi Electric Semiconductor CM150E3U-24H
HIGH POWER SWITCHING INSULATED TYPE - Mitsubishi CM150E3U-24H09
IGBT MODULES HIGH POWER SWITCHING INSULATED TYPE - CM150E3Y12E
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 150A I(C) - CM150E3Y24E
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 150A I(C)